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  v rms v dc v rrm i (av) i fsm v f i r @t c = 90 c sbl3030pt thru 3060pt maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. single phase, half wave, 60hz, resistive or inducti ve load. for capacitive load, derate current by 20% maximum average forward rectified current peak forward surge current 8.3ms single half sine-wave superimposed on rated load maximum recurrent peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum forward voltage at 15.0a dc 30 275 0.55 t j operating temperature range -55 to +125 c t stg storage temperature range -55 to +150 c typical thermal resistance (note 2) r 0jc 2.0 c/w c j typical junction capacitance per element (note1) 700 pf maximum dc reverse current at rated dc blocking voltage @t j =100 c @t j =25 c 1 75 ma v a a v unit v v characteristics symbol features metal of silicon rectifier,majority carrier conduct on guard ring for transient protection low power loss, high efficiency high current capability, low vf high surge capacity plastic package has ul flammability classification 94v-0 for use in low voltage,high frequency inverters,fre e whelling,and polarity protection applications mechanical data case : to-3p molded plastic polarity : as marked on the body weight : 0.2 ounces, 5.6 grams mounting position : any max. mounting torque = 0.5 n.m (5.1 kgf.cm) sbl 3040pt 40 28 40 sbl 3030pt 30 21 30 sbl 3035pt 35 24.5 35 sbl 3060pt 60 42 60 sbl 3050pt 50 35 50 sbl 3045pt 45 31.5 45 0.70 to-3p pin 1 pin 3 pin 2 case e l q p n m f c b a o k j i h g d l pin 1 2 3 schottky barrier rectifiers reverse voltage - 30 to 60 volts forward current - 30 amperes notes : 1. measured at 1.0mhz and applied reverse voltage of 4.0v dc. 2. thermal resistance junction to c ase. all dimensions in millimeter dim. a c de f g b m l k j i h o p nq to-3p min. max. 15.75 16.25 21.75 21.25 19.60 20.10 4.38 3.78 1.88 2.08 4.87 5.13 1.90 2.16 1.22 1.12 2.90 3.20 5.20 5.70 2.10 2.40 0.76 0.51 2.93 3.22 1.93 2.18 20 typ 4.4typ. 10 typ semiconductor lite-on rev. 3, aug-2007, kthd05
rating and characteristic curves sbl3030pt thru sbl3060pt percent of rated peak reverse voltage (%) fig.3 - typical reverse characteristics instantaneous reverse current ,(ma) 20 40 120 140 0 0.01 1.00 100.0 10.0 60 80 100 0.10 t j = 100 c t j = 25 c t j = 75 c fig.5 - typical junction capacitance capacitance , (pf) reverse voltage , volts 10 1 100 10000 1000 100 0.1 fig.1 - forward current derating curve average forward current amperes 20 60 80 100 120 5.0 0 40 20.0 15.0 0 10.0 case temperature , c 25.0 resistive or inductive load 30.0 140 fig.2 - maximum non-repetitive surge current number of cycles at 60hz peak forward surge current, amperes 1 5 10 50 100 2 20 100 150 200 250 8.3ms single half-sine-wave 50 0 300 instantaneous forward voltage , volts fig.4 - typical forward characteristics instantaneous forward current ,(a) 0.2 0.3 0.7 0.8 1.0 10 100 0.4 0.5 0.6 0.1 1.0 0.9 pulse width 300ua fig.4 - typical forward characteristics 0.1 1.0 10 100 0.1 pulse width 300us t j = 25 c sbl3030pt~ sbl3045pt sbl3050pt ~ sbl3060pt 4 t j = 25 c, f= 1mhz


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